| PART |
Description |
Maker |
| TA8062S E003659 |
From old datasheet system
DUAL HIGHSIDE DRIVER
|
TOSHIBA[Toshiba Semiconductor]
|
| MC33091 MC33091A MC33091AP |
HIGH-SIDE TMOS DRIVER 高边TMOS驱动
Regulating Pulse-Width Modulator 16-SOIC -25 to 85 BUF OR INV BASED MOSFET DRIVER, PDIP8
|
Motorola Mobility Holdings, Inc.
|
| MC33091A |
HIGH-SIDE TMOS DRIVER
|
Motorola, Inc
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BTS441T BTS441TG BTS441TS Q67060-S6112-A4 Q67060-S |
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SO -55 to 125
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220
Smart Highside Power Switch One Channel: 20mз
Smart Highside Power Switch One Channel: 20m?/a>
|
INFINEON[Infineon Technologies AG]
|
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
| BTS412B2 BTS412B2E3043 BTS412B2E3062A Q67060-S6109 |
Smart Highside Power Switch 智能阻抗高侧电源开
Transient Voltage Suppressor Diodes
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
From old datasheet system
PROFET Smart High Side Power Switch
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
